| 摘要 |
PURPOSE:To reduce the resistances of source and drain regions by forming high melting point metal layers on the periphery of a gate electrode and the surface of an impurity region, then implanting the impurity to the boundary between the high melting point metal layer and the impurity region, heat treating it to form a high melting point metal compound layer on the surface of the impurity region, and simultaneously forming part of the source and drain regions. CONSTITUTION:A gate electrode 23 is formed through an insulating film 22 on the first conductive type semiconductor substrate 21, with the electrode 23 as a mask the second conductive type impurity or the first, second conductive type impurities are implanted to the substrate 21 to form impurity regions 25a, 25b. Then, a high melting point metal layer 28 is formed on the periphery of the electrode 23 and the surfaces of the regions 25a, 25b to increase the thickness of the side wall of the electrode 23, the second conductive type impurity is implanted to the boundary between the layer 28 and the regions 25a, 25b, heat treated to form a high melting point metal compound layer 29 on the surfaces of the regions 25a, 25b, and to simultaneously form the second conductive type impurity regions 30a, 30b for forming parts of source and drain regions 31, 32. |
