| 摘要 |
PURPOSE:To increase the speed of depositing a thin film on the surface of the base plate by specifying the impedance between the electrodes relative to the electric power and the frequency of a high-frequency power supply for producing glow electric discharge. CONSTITUTION:A glow discharge device for depositing a film on the surface of a base plate 1 such as a silicon wafer is constituted by installing a disk-like electrode 2 on which the base plate 1 is placed and a counter electrode 3 on a cylindrical ceramic tube 6 installed in a square container 4 and connecting the electrodes 2 and 3 to a high frequency power supply through a matching transformer 13. The container 4 is evacuated by using a vacuum pump 12. The device also has tubes 9 and 10 through which gas can be supplied. When the electric power and the frequency of a high frequency power supply is adjusted to be 30W and 25kHz respectively, electric discharge is performed while adjusting the impedance between the electrodes 2 and 3 to within the range of 2.5- 40kOMEGA. Accordingly, it is possible to greatly increase the speed of film deposition without causing plasma damage or developing pin holes. |
