| 摘要 |
PURPOSE:To obtain the title element of low cost which shows high sensivity only to a specific region of near infrared light by a method wherein an electrode surface is formed by making a right angle or an acute angle to the photo receiving surface of a semi-insulation GaAs single crystal with a larger area than that of the photo receiving surface. CONSTITUTION:The electrode surface 2 with a larger area than that of the photo receiving surface 1a is formed so as to make a right angle or an acute angle to the photo receiving surface 1a of the semi-insulation GaAs single crystal 1. For example, the semi-insulation GaAs single crystal 1 is formed into a rectangular prism, and one of its surfaces is made as the photo receiving surface 1a. Two parallel surfaces making right angles to the longitudinal direction of this photo receiving surface 1a are made as electrode surface: this electrode surface is provided with an electrode 2 by ohmic contact, and the area of this electrode 2 is formed larger than that of the photo receiving surface 1a. This manner yields the photo receiving element which shows low sensitivity to visible light and high sensitivity to near infrared light and from which large photocurrent can be led out even when a low voltage is impressed on the electrode 2. |
