| 摘要 |
PURPOSE:To enable the use of the present groove-forming technique to response to reduction in size by increasing the capacitance by providing the first conductor and the second conductor which are buried in a groove and formed by interposing an insulation film. CONSTITUTION:An N<+> type diffused layer 14 is formed in the substrate 11 by facing the groove formed in the substrate 11, and a capacitor electrode 16 is buried in the groove by interposing a capacitor oxide film 15; further, a polycrystalline Si film pattern 21 is buried in the groove via polycrystalline Si oxide film 18 formed on the surface of the capacitor electrode 16. This polycrystalline Si film pattern 21 is connected to the N<+> type diffused layer 14 into the same potential. This follows that the capacitor electrode 16 constituting a cell capacitor forms the polycrystalline Si film pattern 21 and the capacitor via polycrystalline Si oxide film 18 in addition to the capacitor forming the N<+> type diffused layer 14 on the substrate 11 side via conventional capacitor oxide film 15. Besides, the capacitance can be increased nearly double in the conventional capacitor. |
