| 摘要 |
PURPOSE:To enable the attainment of increase in integration by increasing the capacitance without causing the leakage of accumulated charges by a method wherein a plurality of capacitors are allowed to have in common grooves serving as capacitors formed in the main surface of a semiconductor substrate. CONSTITUTION:A plurality of capacitors are allowed to have a groove in common. For example, two capacitors are allowed to have a groove in common by forming a P<-> type inversion preventing layer 20 in the substrate 11 at the bottom and the side surfaces of the groove. This unnecessitates the gap of an element-isolating region to isolate the grooves from each other where the capacitor which has conventionally been necessary is formed; therefore, the increase in integration is facilitated, and the chip size can be markedly reduced. Since the two capacitors are cut off by the P<-> type inversion preventing layer 20, the leakage of accumulated charges to adjacent cell capacitors can be prevented. |
