| 摘要 |
PURPOSE:To obtain a multilayer deposited film with the finished same dimensions as those of a bump head by a method wherein an almost mushroom shaped bump having the main body and the head is formed, and the surface layer of the multilayer deposited film on a semiconductor substrate is removed by dry etching. CONSTITUTION:A pad electrode 3 is formed on a base oxide film 2 formed on the semiconductor substrate 1, and the oxide film 2 is coated with a cover glass 4. A window-opened part 5 is formed above the electrode 3 by removing the cover glass 4 at the center of the electrode 3. A deposited film 6 is formed over the window-opened part 5 and the surface of the glass 4. A bump 8 having the main body 8b and the head 8a larger than the main body 8a in diameter is formed on the deposited film 6 by plating. Using the head 8a as a mask, the bottom 6a of the deposited film 6 is removed by dry etching. As a result, the finished dimension E of the deposited film 6 is larger than the dimension B1 of the bump main body 8b and almost the same as the dimension B2 of the head 8a. |
