| 摘要 |
PURPOSE:To enhance current value reaching the sample surface and improve drawing speed by adequating forming a beam for irradiation so that it almost matches with the arranging region of molded aperture group. CONSTITUTION:A multielectron beam exposure apparatus is composed of an electron gun 401, a 4-pole lens 402 of 3-stage structure, a rectangular molded aperture group 403 where 8 rectangular molded apertures 403A are arranged in a line, a blanker group 404, a blanking aperture 405, a 2-stage scale reduction lens system 406, an objective deflection system 407 and a wafer 408. The rectangular molded aperture group 403 is uniformly irradiated with electron beam obtained from the 4-pole lens 402. An image of rectangular molded aperture group 403 where 8 apertures 403A are arranged in a line is reduced to 1/30 by a scale reduction projection system 406 and is projected on the wafer 408. Such reduced image is projected to the desired region within the drawing field by the objective deflection system 407. |
