| 摘要 |
<p>PURPOSE:To reduce the short circuit between bus lines and the breaking of wire of a drain bus line by covering the crossing of each bus line with an interlayer insulation film which has lower dielectric constant and is thicker than a gate insulation film. CONSTITUTION:A thin film transistor (TFT) matrix array has a construction of many TFTs consisting of a transparent insulator substrate 21 such as glass and a gate electrode 22, a gate electrode 22, a gate insulation film 23 such as SiO2, a semiconductor film 24 such as an amorphous semiconductor, a source electrode 25 and a drain electrode 26 installed in matrix on the substrate 21. An interlayer insulation film 24 at the crossing 10 of a drain bus line D and a gate bus line G consists of an organic material such as polyimide (dielectric constant = 2-3) and an inorganic material.</p> |
