| 摘要 |
PURPOSE:To prevent an electrically connected part from making inroad into the region of an indirect transition as well as to enable to manufacture a GaAlAs light-emitting diode device of excellent light-emitting efficiency by a method wherein the second P- layer of low acceptor impurity density is provided between the first P-layer and an N- layer. CONSTITUTION:The first p-layer 11 is grown by contacting a Zn-added GaAlAs melt to a p-type GaAs substrate by performing a liquid phase epitaxial growing method, and then the second p-layer 12 is grown by contacting the GaAlAs melt, wherein Zn added in the quantity less than the above-mentioned added quantity of Zn, to the first P-layer 11. Moreover, an n-layer 3 is grown by contacting a Te added GaAlAs melt to said layer 12. Consequently, although the Te of the n-layer 3 is diffused in the second p- layer 12, it can be adjusted on the composition interface J, because the degree of the above-mentioned diffusion is lower than the diffusion of Zn. If the effect of compensation is taken into consideration on the composition interface J of the second p-layer 12, namely, the p-layer 13 and the n-layer 3, the density of carrier becomes NA=ND on the composition interface J, the electrically connected part J' and the composition interface J are coincided, and an excellently efficient light-emission can be performed. |
