发明名称 Semiconductor integrated circuit using vertical PNP transistors
摘要 A semiconductor integrated circuit comprises a differential pair of transistors, a pair of constant current source transistors, an emitter resistor connected between the emitters of the differential transistors, and a load resistor coupled to the collector of one of the differential transistors. Each of the differential transistors and constant current source transistors is a vertical PNP transistor. In the semiconductor integrated circuit, therefore, each vertical PNP transistor has its collector coupled with a parasitic diode having a relatively large junction capacitance. The parasitic diodes are reversely biased when the circuit is operative. In order to prevent the frequency characteristic from being deteriorated due to the junction capacitance of the parasitic diodes, a resistor circuit, which forms a differentiating circuit together with the emitter resistor and the parasitic diodes, is connected between the cathodes of these diodes and a power source, whereby the differentiating time constant of this differentiating circuit is so adjusted as to become substantially equal to the integrating time constant of an integrating circuit including the load resistor and the parasitic diode.
申请公布号 US4573022(A) 申请公布日期 1986.02.25
申请号 US19840681142 申请日期 1984.12.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KOGA, TAKASHI
分类号 H01L29/72;H03F1/08;H03F1/48;H03F3/45;(IPC1-7):H03F3/14 主分类号 H01L29/72
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