Titanium disulfide thin film and process for fabricating the same

摘要

The present invention relates to a titanium disulfide film fabricated on a substrate, where crystallites of titanium disulfide is oriented at an angle of their c-axis to the substrate surface of not more than 45 DEG , and to a process for fabricating the film, where the film is prepared by chemical vapor deposition from TiCl4 and H2S as source gases under an inner pressure of reaction tube of 30 kPa or less.