发明名称 |
Troide plasma reactor with magnetic enhancement |
摘要 |
A triode apparatus with magnetic enhancement for dry processing semiconductor wafers and the like. A conductive substantially cylindrical chamber contains a cathode that is connected to a first source of AC power. A wafer stage mounted on the inside of the chamber wall is connected to a second source of AC power. The chamber has means for connection to a reference voltage potential. Means for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.
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申请公布号 |
US4572759(A) |
申请公布日期 |
1986.02.25 |
申请号 |
US19840685499 |
申请日期 |
1984.12.26 |
申请人 |
BENZING TECHNOLOGY, INC. |
发明人 |
BENZING, DAVID W. |
分类号 |
H01L21/302;C23F1/00;H01J37/32;H01L21/205;H01L21/31;H01L21/3213;H05H1/46;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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