发明名称 Troide plasma reactor with magnetic enhancement
摘要 A triode apparatus with magnetic enhancement for dry processing semiconductor wafers and the like. A conductive substantially cylindrical chamber contains a cathode that is connected to a first source of AC power. A wafer stage mounted on the inside of the chamber wall is connected to a second source of AC power. The chamber has means for connection to a reference voltage potential. Means for generating a magnetic field perpendicular to the electric field generated between the chamber walls and the cathode is also provided.
申请公布号 US4572759(A) 申请公布日期 1986.02.25
申请号 US19840685499 申请日期 1984.12.26
申请人 BENZING TECHNOLOGY, INC. 发明人 BENZING, DAVID W.
分类号 H01L21/302;C23F1/00;H01J37/32;H01L21/205;H01L21/31;H01L21/3213;H05H1/46;(IPC1-7):H01L21/306;B44C1/22;C03C15/00;C23F1/02 主分类号 H01L21/302
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