INTEGRATED SEMICONDUCTOR CIRCUIT WITH BIPOLAR TRANSISTOR STRUCTURE, AND A FABRICATION METHOD THEREOF

摘要

The invention relates to an integrated semiconductor circuit with bipolar transistor structure, in which the emitter region as well as the base region and the collector contact region are produced by out-diffusion of a metal silicide layer provided with a respective doping substance and deposited directly on the substrate. The metal silicide layer structures provided with the respective doping, using in particular silicides of the metals tantalum, titanium, tungsten or molybdenum, serve as additional wiring planes and permit a higher density and a very low-resistance contacting structure.