| 摘要 |
PURPOSE:To prevent the reduction of reliability due to the dispersion of a photo detective area or the contamination in the process of manufacture by limiting the photo detective area providing an insulation layer between a bottom electrode and a photo conductive layer. CONSTITUTION:A sensor S consists of a bottom electrode 12 consisting of an electrode 12a divided on a glass substrate 11 and a lead wire 12b, an insulation layer 13 of a silicon oxide film, a photoconductive layer 14 of a-Si:H, a translucent top electrode 15 and a surface protection film 16. A driving mechanism D is connected to the lead wire of each sensor and consists of wiring layers 17, 18 each arranged in longitudinal or transverse stripes. The lead wire 12b is covered with the insulation layer 13 and only the electrode 12a is kept in contact with the photoconductive layer 14 as the bottom electrode 12. A photo detective area is precisely limited by the bottom electrode 12 and the insulation layer 13 and the materials used are not damaged by such a process as photoetching. |
