| 摘要 |
PURPOSE:To enable easy peeling of a positive type photoresist formed on an inorg. substrate in a short time without corroding the metals of the substrate and the like by using a compsn. composed of specified amts. of methylene chloride, metasulfonic acid, and aromatic sulfonic acid. CONSTITUTION:A compsn. used for peeling a positive type photoresist formed on the inorg. substrate is composed of 50-99wt% methylene chloride, 1-50wt% metasulfonic acid, and 1-50wt% aromatic sulfonic acid, such as monoalkylbenzenesulfonic acid or dialkylbenzenesulfonic acid, preferably, xylenesulfonic acid and dodecylbenzenesulfonic acid. The inorg. substrate can be easily peeled of the photoresist film in a short time by bringing said peeling agent compsn. into contact with the resist film formed on the substrate at 10-40 deg.C, and then, washing it with methanol or the like and further washing it with water. |
