SUBSTRATE MATERIAL FOR SEMICONDUCTOR DEVICE

摘要

PURPOSE:To provide substrate material with high thermal conductivity while controlling the thermal expansion coefficient by a method wherein silicon particles are contained in copper matrix to make the thermal expansion coefficient thereof equivalent to those to semiconductor element and enclosure material while providing itself with high thermal conductivity. CONSTITUTION:10-60vol% of silicon particles with diameter of 0.01-10mum are contained in copper matrix to provide itself with high thermal conductivity while making the thermal expansion coefficient thereof equivalent to those of semiconductor element and enclosure material. Besides, the purpose of limiting the Si content of 10-60vol% is to make the thermal expansion coefficient thereof approximate to those of Si or As as semiconductor element and sintered alumina as enclosure material within the range of said volume % to minimize the effect of stress due to unmatching in thermal expansion. Likewise, the purpose of limiting the particle diameter of Si dispersed particles to 0.01-10mum is to avoid the remarkable deterioration in thermal conductivity of material not exceeding 0.01mum as well as the diminishing effect in restraining thermal expansion by mechanical alloying process together with such defects as clog, crack etc. and deterioration in machinability in extrusion process of the material exceeding 10mum.