| 摘要 |
PURPOSE:To improve characteristics combining the characteristics of both type electrostatic induction (SI) thyristors by making the coexistence of the construction of a buried gate SI thyristor and the construction of a beam base SI thyristor. CONSTITUTION:A P<+> gate 3 is so formed on the N<-> surface 2 of a substrate which has a P<+> layer 1 that a region C which has a narrow interval channel 5' and a region B which has a wide interval channel 5 coexist and an N-layer 2'' is epitaxially grown. In the region C, the channel 5' is closed by the horizontal diffusion of P type impurity from the P<+> gate 3 and the P<+> gate 3 is short- circuited by a p-layer 6. In the region B, the channel is not closed. An N<+> layer 4 is formed and an anode 7, a cathode 8 and a gate electrode 9 are also formed. A buried gate SI thyristor which has the channel and a beam base SI thyristor which has no channel coexist in a chip. |
