FIELD FEECT TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To improve the accuracy of a gate electrode length by determining the length of a direction for coupling a source electrode to a drain electrode according to the thickness of a conductive layer as a laminar layer corresponding to a gate electrode. CONSTITUTION:A laminar layer 4 having a window 3 at a single crystal semiconductor substrate 1 and a single crystal semiconductor layer 9 extending from the upper surface of the layer 4 in contact with the inner surface of the window 3 on the region faced with the window 3 are formed. The layer 3 is formed of a conductive layer 5, the first electrode 16 is ohmically contacted with the substrate 1, and the second electrode 13 is ohmically contacted with the layer 9.