| 摘要 |
PURPOSE:A resist material having excellent dry etchability, high sensitivity to electron beams and good resolution, comprising a polymer having specified fundamental units in the molecular skeleton. CONSTITUTION:A compound of formula I (wherein R1-3 are each H, a 1-6C hydrocarbon group or a group derived by replacing at least one H thereof with F) obtained by conducting Diels-Alder reaction between (methyl)cyclopentadiene and an (isopropenyl) ester of a carboxylic acid is copolymerized with SO2 at -100-100 deg.C in the presence of a radical catalyst to obtain a resist material comprising a polymer of a number-average MW of 10,000-1,000,000 having fundamental units of formula II in the molecular skeleton. A solution prepared by dissolving a mixture comprising this resist material and 0-50wt% organic material (e.g., epoxy resin) in a solvent is applied to a substrate, cured by heating to 100-200 deg.C, exposed to electron beams, and developed with a developer comprising a good solvent and a poor solvent. |
