| 摘要 |
PURPOSE:To obtain an Al alloy for an Al alloy bonding wire forming hardly an oxide film during melting by heating and having superior suitability to ball formation and superior bonding strength by adding a specified amount of Bi and/or Be to Al or an Al alloy. CONSTITUTION:The bonding wire used in the connection of a semiconductor device is made of an Al alloy obtd. by adding 0.01-0.5% Bi and/or Be to Al or an Al alloy such as Al-Mn, Al-Fe, Al-Mg, Al-Pd, Al-Ni-Mg, Al-Pd-Mg or Al-Mg-Mn. Since Bi and Be reduce the formation of an oxide film during melting by heating, a bonding wire having superior suitability to ball formation and superior bonding strength during bonding is obtd. |
