| 摘要 |
PURPOSE:To control effectively the leakage of electric discharge from an evacuation port and to prevent a decrease in the depositing velocity of a film on a substrate by discharging a gas, supplied into a space between the first and the second electrode, to the outside of the second electrode from the evacuation port having small diameter. CONSTITUTION:A reaction gas is introduced into a vacuum vessel 21 from plural introducing ports 22 provided to a cathode 24, and glow discharge is generated by a high-frequency power source 30 between said cathode 24 and an electrode 25 surrounding the cathode 24 while discharging the gas from an evacuation port 23. Consequently, a film is deposited on a substrate 26 fixed to the inside of the peripheral wall of the electrode 25. In said plasma CVD device, at least one evacuation port 27 and 28 having 0.1-20mm. diameter is provided respectively to an annular plate 31 at the lower end of the electrode 25 and a ceiling wall 32 at the upper end, and the reaction gas, which is ejected into the space between the cathode 24 and the electrode 25 from said cathode 24, is discharged to the outside of the electrode 25 from the evacuation ports 27 and 28. Consequently, the leakage of electric discharge from the evacuation ports 27 and 28 is prevented, and a decrease in the film depositing velocity due to a decrease in the power efficiency of the electric discharge is prevented. |
