发明名称 PACKAGE FOR HIGH-FREQUENCY SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent an abnormal oscillation and the lowering of an output, and to extract a high output by forming a conductive projection electrically connected to a metallic layer for a vessel section and an inner-surface metallized layer for a cover section into a vessel. CONSTITUTION:A metallic layer 2 on which a semiconductor chip is fixed is formed on the internal base of a vessel, and a source terminal S is shaped to the metallic layer 2. A side-surface metallized layer 5 connected to the source terminal S is formed on an outer wall 4 on the side where the source terminal S is shaped. A gate terminal G and a drain terminal D are extracted from outer-wall side surfaces on which there is no side-surface metallized layer 5. An inner- surface metallized layer is shaped onto the whole surface of the inner surface of a cover section 6 so as to be electrically connected to the metallized layer 5 when the cover section 6 is mounted onto a vessel section. A conductive projection 8 electrically connected to the metallic layer 2 for the vessel section and the inner-surface metallized layer for the cover section 6 is shaped in the vessel.
申请公布号 JPS6136955(A) 申请公布日期 1986.02.21
申请号 JP19840159821 申请日期 1984.07.30
申请人 NEC CORP 发明人 SAITO AKIRA
分类号 H01L23/04;H01L23/02;H01L23/12;H01L23/66 主分类号 H01L23/04
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