发明名称 |
INFRARED RAY LINEAR ARRAY ELEMENT AND MANUFACTURE THEREOF |
摘要 |
PURPOSE:To obtain the high-resolution elements of high sensitivity without cross talk by forming openings on the parts of substrate which oppose to plural light accepting elements and also forming spaces among said elements so as to isolate the elements. CONSTITUTION:A platinum electrode 2 on which lattice-form part 3 is formed corresponding to the pace of an array is formed on an MgO single crystal substrate 1. Nextly etching is done with protecting the part except the array part with resist to form a recess 4. Then a PbTiO3 film 5 is formed. Furthermore, an upper electrode 6 is formed on the film 5 with corresponding to the lattice 3 of the electrode 2. Etching is done with protecting the necessary part of said electrode 6 with resist and the substrate 1 of a light accepting part is fused to form an opening 7. As a result, PbTiO3 among the elements are fused and removed together with the substrate 1 and the infrared ray linear array elements in which the elements are isolated by spaces. |
申请公布号 |
JPS6136967(A) |
申请公布日期 |
1986.02.21 |
申请号 |
JP19840159606 |
申请日期 |
1984.07.30 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
IIJIMA KENJI;UEDA ICHIRO |
分类号 |
G01J5/02;G01J5/34;H01L27/146;H01L31/0264;H01L37/02 |
主分类号 |
G01J5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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