| 摘要 |
PURPOSE:To elevate a current level, to enable the enhancement of velocity of reading operations and to improve S/N by improving a degree of effective conductivity by making amorphous silicon for effecting photoelectric conversion into silicide partly. CONSTITUTION:A photoelectric conversion part 2 is formed on a transparent insulating substrate 1. A pair of metallic electrodes 3a and 3b ae formed on the substrate 1 and the photoelectric conversion part 2 at the predetermined interval. The photoelectric conversion part 2 is divided into the upper layer 2b as the silicide region where the silicide of amorphous silicon and metal of electrode 3 is formed partly, and the lower layer 2b as the amorphous silicon region. Thus the photoelectric conversion part is composed of two layers and a degree of conductivity of the upper layer 2b is more improved than that of the lower layer 2a so that the current level between the electrodes 3a and 3b through the photoelectric conversion part 2 is elevated. |
