| 摘要 |
PURPOSE:To prevent the enhancement of resistance between source and drain caused by the hot electron phenomenon in a MISFET of LDD structure by forming a conductive layer on the high-resistance region composing source and drain regions. CONSTITUTION:A field oxide film 12 is formed on a substrate 11 and a gate oxide film 13, a gate electrode 14, and the source and drain regions composed of an N<-> diffusion layer 17 and an N<+> diffusion layer 18 are formed in the region sectioned by said field oxide film 12. In the MISFET of such constitution, a conductive layer 16 consisting of molybdene silicide is arranged on the N<-> diffusion layer 17 composing a high-resistance region by ohmic contact. By this constitution, the enhancement of resistance of the diffusion layer 17 can be restrained even if the hot electron phenomenon occurs, and accordingly the deterioration of transfer conductance due to the enhancement of the resistance between source and drain can be prevented. |
