| 摘要 |
PURPOSE:To expand an effective active region, and to improve the degree of integration by forming a protective circuit means added to input-output sections for a functional circuit element near a scribing region at a chip end and disposing one part of the protective circuit means into the scribing region. CONSTITUTION:A drain region 7 in a protective parasitic MOS transistor 1 is positioned into an active region 3 in a semiconductor base body 2, and a source region 8 is positioned into a scribing region 4 at a chip end. A gate region 9 is formed onto an oxide film 10 shaped between the regions 7, 8. Each region 7-9 is connected to a bonding pad 5 by a wiring pattern 6. Accordingly, a parasitic type is used as the MOS transistor as an input-output protective circuit, and the MOS transistor is extended over both regions of the scribing region and the active region, thus improving the degree of integration of an element. |
