| 摘要 |
PURPOSE:To realize a low resistance ohmic contact without deteriorating junction characteristic even for a semiconductor layer having a fine and shallow P-N junction by forming a metal nitride film after forming a metal film on a diffused layer and also forming a contact electrode on the upper layer of such metal nitride layer. CONSTITUTION:On the occasion of forming a contact electrode to an N<+> type silicon diffused layer 22 formed on a P type silicon substrate 21, a titanium film 24 is first formed, then a titanium nitride film 25 having the composition of which content of nitrogen increases continuously is formed and an aluminum film 26 as the contact electrode is then formed as the upper layer on said film 25. Thereby, the interfacial reaction between electrode and semiconductor region is controlled by existence of barrier metal and breakdown of junction by heat processing after formation of electrode can be prevented even for fine and shallow semiconductor region having the P-N junction. Simultaneously, a low resistance and highly reliable ohmic contact can be formed. |
