发明名称 SEMICONDUCTOR MANUFACTURING APPARATUS
摘要 <p>PURPOSE:To prevent the air to be generated at the side surface of an apparatus provided over two chambers by forming an additional sealed chamber to a low pressure chamber, placing the end part of apparatus with a clearance to such sealed chamber and connecting a high pressure chamber and a sealed chamber with a bypass path. CONSTITUTION:A sealed chambr C is formed in the side of a machine chamber B, the gas supply side 1b of reaction pipe 1 is placed within such sealed chamber C, and a gap (c) is provided between the sealed chamber C and reaction pipe 1. Meanwhile, a comparatively large hole 3b is additionally provided to the separation wall 3, such hole 3b is connected with the sealed chamber C with a pipe 5 forming a bypass path. An air filter 6 is provided within such pipe 5. There is no pressure difference between the working surface side 1a and gap supply side 1b and thereby air does not flow through the gap (a) between the circumference of reaction pipe 1 and heater 2. Therefore, a temperature detector 4 is capable of accurately detecting temperature of reation pipe 1.</p>
申请公布号 JPS6135532(A) 申请公布日期 1986.02.20
申请号 JP19840156894 申请日期 1984.07.27
申请人 NEW JAPAN RADIO CO LTD 发明人 NOBE KAZUE;KITAMURA MASAYOSHI
分类号 H01L21/66;C23C14/54;C23C16/44;H01L21/22 主分类号 H01L21/66
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