| 摘要 |
<p>PURPOSE:To solve a thermal stress interference for active layer of laser element or light emitting diode by forming a sintered body mainly composed of alumininum nitride as the material for pedestal of semiconductor element. CONSTITUTION:A sintered body mainly composed of aluminum nitride is used as the pedestal member 1. Particularly those obtained by adding at least a kind of calcium carbide, strontimum carbide and acetylide compound of barium carbide so that a total content becomes 0.02-10wt% and by sintering it are suitable for practical use. Not only the heat generated from laser or light emitting diode can be effectively absorbed but also a thermal expansion coefficient near to that of the material of semiconductor element 5 does not give any mechanical stress due to the thermal factor to the active layer of semiconductor element by using the pedestal member composed of aluminum nitride having the thermal absorption efficiency of about 4-8 times that of alumina. Therefore, the function of active layer can be stably operated for a long period of time.</p> |
