| 摘要 |
PURPOSE:To prevent connection between a portion of a second superconductive electrode on a first superconductive electrode and a portion of the second superconductive electrode on an insulating layer, by providing a recess in the first superconductive electrode and forming the second superconductive electrode at the recess. CONSTITUTION:A first superconductive electrode 3 of a high-melting point superconductive material is formed on an oxide film 2 formed on a silicon substrate 1. A resist pattern 10' having eaves is formed, and SiO 4 is deposited thereon by evaporation, resulting in formation of burrs 12. The resist 10' and the SiO 4 thereon are removed, and with the remaining SiO 4 used as a mask, the surface of the first superconductive electrode 3 is etched to form a recess 14. With a resist 13 used as a mask, a lead-indium-gold alloy is deposited by evaporation to form a second superconductive electrode 15. Since the recess 14 is provided, the effective height of the SiO 12 in the opening is sufficiently large, so that the upper and lower second superconductive electrode layers are satisfactorily separated from each other. After a tunnel barrier layer 16 has been formed, a lead-bismuth alloy is deposited by evaporation to form a third superconductive electrode 17, and the resist 13 is then removed. |
