| 摘要 |
PURPOSE:To keep a good ohmic characteristic of a contact with a silicon substrate, increasing hardly the resistance value, by using a wiring layer consisting of a lower aluminium-silicon metal layer and a thicker aluminium layer than the thickness of the lower layer, being formed thereon. CONSTITUTION:Through a contact hole 8 being formed in an SiO2 film 6 on a substrate surface, an aluminium-silicon metal layer 20 with a thickness of 2,000Angstrom containing 1% of silicon is first deposited, and then an aluminium layer 22 with a thickness of 8,000Angstrom is deposited thereon to constitute a wiring layer 24. Thereafter, after the wiring layer 24 is patterned with photo etching in accordance with normal process, it is heated at a temperature of 450 deg.C for 10min in hydrogen to do an alloying treatment. In this way, there is provided a semiconductor device which does not result in P-N junction breakdown phenomenon owing to pits while keeping a good characteristic of the contact with the silicon substrate. |
