| 摘要 |
PURPOSE:To shorten a turn-around time of device manufacture, by transferring an information writing process to a post-process. CONSTITUTION:In a case where an information is written in a MOS cell transistor, an N<+> type layer 16 in a silicon substrate 11 under a source electrode window 19 is selectively etched to form a removed section. Next, over the entire face of the silicon substrate 11, an aluminium film is coated, and then source, gate and drain electrodes 23, 24, 25 are formed using a photo resist pattern as a mask. Thereafter, the silicon substrate 11 is heat-treated in an inert gas atmosphere. Aluminum Al of a program pattern being formed at the source electrode window 19 is diffused in the direction of the depth in the N<+> type layer 16 contacting with it, is penetrated through the N<+> type layer 16 to short the P-N junction, and reaches the silicon substrate 11, thereby to write an information. |
