| 摘要 |
PURPOSE:To make dimensions of a memory cell small, by employing a vertical- type MOSFET as a transistor in the cell. CONSTITUTION:Word wires 1 serving as a gate electrode are formed on the internal faces of a concave 9a formed vertically on the principal surface of a semiconductor subtrate 11, and diffused layers 4, 12 serving as source-drain regions are formed at the upper portion of the channel region 10a and at the underside of the concave respecrively, so that a vertical-type MOSFET is formed as a transistor in the cell. A predetermined pattern of bit wires 2 is formed on the surface, one diffused layer 12 is connected to one bit wire 2, and the other diffused layer 4 is served as a common current return wire. Writting of information can be doe by whether or not there is a contact hole 3. In this way, dimensions of the memory cell can be reduced and thereof the high-density memoty can be realized. |
