| 摘要 |
PURPOSE:To obtain a semiconductor device with possesses a superior dissipation propertied insulating substrate by a method wherein a semiconductor element is adhered to a concave section of an insulating laminated substrate whose main component is Al nitride. CONSTITUTION:A semiconductor element 2 is adhered by soler and the like to a concave section of an insulating laminated substrate 1 whose main component is AlN. The electrode of the semiconductor element 2 is connected to a metallic wiring 4 formed inside laminated substrate 1 by a gold wire 3, and the metallic wire 4 is connected to a lead 6 through a metallized layer 5 which is formed to the side face of the laminated substrate 1. As the insulating substrate is made of AlN, high integraiton of a semiconductor device, which has superior dissipation property and much value of electric power consumption, is enabled. Additionally, as mechanical strength is superior to conventional alumina substrate and coefficient of thermal expansion is close to Si, the generation of thermal strain to the semicondutor element followed to thermal cycle is few and also highly reliable semiconductor device is obtained. |
