Semiconductor layer made of a transition metal dichalcogenide, method for the preparation thereof and use of such semiconductor layers for solar cells

摘要

Semiconductor layers made of a transition metal dichalcogenide, especially having the composition MX2(M = W, Mo; X = S, Se, Te), prepared in a specially adapted process, enable the use of said layers in solar cells. Large-area layers made of two-dimensional crystals 4 having good photoelectric behaviour are provided. The semiconductor layer is generated at the boundary layer 5 of a melt 2 situated within a crystallisation vessel 1 and the gas phase 3 located thereabove of the melt material. The two-dimensional crystals 4 which, with large surface areas 8 and small lateral steps 9, grow to form the semiconductor layer and have the composition MX2 are suitable as photovoltaic and photoelectric large-area semiconducting layers for solar cells.