发明名称 THICK FILM HYBRID INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To provide a device having a excellent heat-dissipation characteristic, by putting a circuit element on an electrical-insulating substrate containing a principle ingredient of aluminiun nitride. CONSTITUTION:Circuit elements such as a semiconductor device 3, a cermet resistor 4 and a capacitor chip 5 are secured on a conductive wiring 2 made of silver paste being formed on the principal face of an aluminum nitride insulating substrate 1. The insulating substrate in which at least one of acetylide compounds of calcium carbide, strontium carbide and barium carbide is added by 0.02-10wt% in their total and is sintered, can be practically employed and can absorb heat quantity resulted from circuit elements at an efficiency 4-8 times that of alumina owing to the excellent heat conductivity to dissipate the heat.
申请公布号 JPS6135555(A) 申请公布日期 1986.02.20
申请号 JP19840156801 申请日期 1984.07.27
申请人 NEC CORP 发明人 KAMATA TORU;NOGUCHI SHOZO;KUROKAWA YASUHIRO;UCHIUMI KAZUAKI;TAKAMIZAWA HIDEO;YOTSUYANAGI KEIICHI
分类号 H05K1/03;H01L23/15;H01L25/16;H01L27/01;H01L27/13;H05K1/16 主分类号 H05K1/03
代理机构 代理人
主权项
地址
您可能感兴趣的专利