| 摘要 |
PURPOSE:To obtain a semiconductor device with high heat dissipation property by using epoxy regin composition, in which powder of sintering body of Al nitride, contained as main component, is combined as filler, as sealing material. CONSTITUTION:A semiconductor element 2 with large power consumption rate is adhered to a mount base 1, the semiconductor element 2 and a lead 4 is connected by a bonding wire 3. The mount base 1, the semiconductor element 2, the bonding wire 3 and a part of the lead 4 are sealed with epoxy resin composition 5 by the transfer molding method. In this epoxy resin composition 5, AlN powder is combined about 70% as filler, and in this AlN, acetylide compound, for instance, C, Sr and Ba are combined 2-4%. Because of high heat conduction rate of the sealing resin, high heat property is obtained, and high integration of semiconductor with large power consumption is enabled. |
