| 摘要 |
PURPOSE:To obtain a light-receiving element which can operate at cryogenic temperatures and can be fabricated on the same substrate as a switching element composed of a superconductive material in the form of an integrated circuit, by providing a first superconductive electrode, a semiconductor layer provided thereon, and two, second and third, superconductive electrodes for effecting electrical connection to the semiconductor. CONSTITUTION:On an Si substrate which contains phosphorous as an impurity, Nb is deposited by sputtering using Ar gas and subjected to Ar ion etching using a photoresist as a mask, thereby forming a source electrode 2, a gate electrode 3 and a drain electrode 4. Subsequently, Si which contains phosphorus as an impurity at a relatively high concentration is deposited in a vacuum to form an amorphous or polycrystalline Si active layer 5. A connecting layer 6 having an impurity concentration which is higher than that of the active layer 5 is formed on the source and gate electrodes 2, 3, and an amorphous or polycrystalline Si which has an impurity concentration lower than that of the active layer 5 is deposited to form a diffused layer 7. Finally, Pt-Si is formed on the surface to provide a ground electrode 7. The conductance between the source electrode 2 and the drain electrode 4 changes in accordance with the irradiation with light. |
