| 摘要 |
Incorrect polarity protection for circuit arrangements with a load (L) comprises the drain (D) - source (S) junction of a MOSFET transistor (TN) being connected into one of the supply leads between the voltage source (Us) and the circuit having the load (L). The gate (G) of the transistor (T) is connected to the opposite terminal of the supply voltage (Us). <IMAGE>
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