Semiconductor storage device and process for fabricating it

摘要

The invention provides a semiconductor storage device and a process for fabricating it, in which the electric capacity of a capacitor part is increased without thereby increasing the area of a storage cell which has a transmission gate and a capacitor. A semiconductor storage device according to the invention has a plurality of grooves which are formed at predetermined small spacings on the surface of a semiconductor substrate on a capacitor part in such a way that the surfaces of said grooves serve as a capacitor electrode for increasing the capacity of the capacitor part. The method used for forming the grooves is a process using laser holography, with the aid of which photoresist patterns are formed in the shape of fine stripes, and the semiconductor substrate is etched using said stripe patterns as a mask. <IMAGE>