| 摘要 |
PURPOSE:To facilitate the manufacture of a semiconductor device which is prevented from producing kink effect, by forming, integrally with a first semiconductor layer of a first conductivity type formed on an insulator, a second semiconductor layer to which a constant potential is to be applied, such that the second layer projects out of a gate electrode forming region. CONSTITUTION:A P type semiconductor layer 2 on a quartz plate 1 is provided with an insulation film 4 formed except for the MOSFET forming regions 3A- 3C. This insulation film 4 is formed such that it does not reach the quartz plate 1 in the linear regions 5A-5C for connecting the centers of the regions 3A-3C and that it reaches the quartz plate 1 in the other regions. In each of the regions 3A-3C, an N type diffusion layer is formed except for the central region so that a drain layer 2A and a source layer 2B are provided respectively in the two subregions divided by the central region, so as to reach the quartz plate 1. The central region is provided with a gate layer 2C, on which a gate electrode 7 is formed through the gate oxide film 6. The gate layers 2C of the MOSFET's are connected together, to which a constant potential is applied. Thus, the kink effect can be effectively prevented. |
