发明名称 |
HEAT TREATING METHOD |
摘要 |
The method comprises the following steps: depositing the coating (20) to be treated on a first face (11) of the dielectric support (10); depositing a layer (30) of electrically conductive material on a second face (12) of the dielectric support (10) opposite to the first face and generally parallel thereto, the thickness of said layer (30) being of the same order as the penetration depth delta in the material thereof of the selected electromagnetic wave; and applying microwave energy to the assembly thus constituted in such a manner that the direction of vibration of the electric field is substantially parallel to the coating (20) to be treated and to the layer (30) of conductive material. |
申请公布号 |
JPS6134888(A) |
申请公布日期 |
1986.02.19 |
申请号 |
JP19840199339 |
申请日期 |
1984.09.21 |
申请人 |
CENTRE NATL RECH SCIENT <CNRS> |
发明人 |
ANDORE JIYAN BERUTOO;RUNE KUREMAN;ARAN GERUMAN |
分类号 |
B41M5/382;B05D3/02;B32B37/00;B41M5/26;B41M5/50;B41M5/52;H01B5/14;H01B13/00;H01L21/70;H05B6/78;H05B6/80;H05K1/09;H05K3/12 |
主分类号 |
B41M5/382 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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