发明名称 ROW DECODER CIRCUIT OF NON-VOLATILE MEMORY
摘要 PURPOSE:To convert a voltage VCC type decoder selection signal to a VPP type (write-in type) signal securely and speedily and expand a VCC margin by installing a voltage conversion circuit between an AND circuit and a selection circuit. CONSTITUTION:When a fi' input is an earth electric potential an inversion fi' input is an SW (read-out) electric potential, transistors (TR) 31 and 32 are respectively off and TR33 is on, an electric potential of a word line is pulled down to the earth electric potential and the word line is in the non-selection condition. By installing a voltage conversion circuit 21 between a NAND circuit 20 and a selection circuit 22, influences are removed which substrate bias effects of an NCH enhancement type TR give, a margin of circuit pattern design is broad, high speed action can be executed and a VCC margin is wide. Such a circuit can be composed.
申请公布号 JPS6134796(A) 申请公布日期 1986.02.19
申请号 JP19840155021 申请日期 1984.07.25
申请人 TOSHIBA CORP 发明人 ATSUMI SHIGERU;TANAKA SUMIO;SAITO SHINJI
分类号 G11C17/00;G11C8/00;G11C11/407;G11C11/413;G11C16/06;H01L21/8246;H01L21/8247;H01L27/10;H01L27/112;H01L29/78;H01L29/788;H01L29/792 主分类号 G11C17/00
代理机构 代理人
主权项
地址