| 摘要 |
PURPOSE:To prevent the invasion of an impurity introduced by self-alignment to the lower part of a gate electrode by a method wherein an impurity is selectively introduced to a semiconductor substrate by ion implantation, and source and drain regions are formed by activating the impurity by the removal of the second film. CONSTITUTION:Ions are selectively implanted to a source-forming region 20 and a drain-forming region 21 by providing a mask 19. In this ion implantation, Si invades to the lower part of the side wall 18A in the neighborhood of the outer surface by the lateral dispersion of Si ions implanted to the regions 20 and 21. The implanted Si is activated by heat treatment after removal of the side wall 18A and the mask 19, resulting in the formation of the N type source region 20A and drain region 21A. Si atoms the impurity are diffused laterally on this heat treatment and then go close to the lower part of the gate electrode 15. Newly a protection film 22 is formed by removing a protection film 17, and a source electrode 23, a drain electrode 24, and a gate wiring 25 are arranged by the conventional technique. |
