| 摘要 |
PURPOSE:To stabilize contact and reduce the contact resistance by a method wherein a polycrystalline Si film doped with high-concentration arsenic is connected to an electrode metal film mainly made of aluminum via high melting point metal silicide film and barrier metal film. CONSTITUTION:An As buried layer 2, an epitaxial grown layer 3, and an insulation oxide film 4 are formed on an Si substrate 1, and a collector phosphorus diffused layer 5, a base region 6, and an emitter base isolation oxide film 4' are formed. Polycrystalline Si films 8 are selectively formed, and As is ion- impoanted. A CVD oxide film 8 is formed and heat-treated, thus forming an emitter region 9. A Pt silicide film 10, a Ti-W film 11, an Al film 12 are formed by opening the CVD film. Since the high melting point metal silicide film is in contact with the N type polycrystalline Si film 7 doped with 10<19> atoms/cm<3> or more of As atoms, the contact resistance can be reduced to an extreme degree without generation of abnormality. |
