发明名称 Method of forming an insulating film on a semiconductor body.
摘要 <p>The present invention relates to a method of manufacturing a semiconductor integrated circuit wherein a thin film such as insulator film is formed on selected areas of a semiconductor substrate. According to the present invention, photoresist is provided on selected areas of the semiconductor substrate in advance. The semiconductor substrate is placed in a reactor, and raw material gases for the thin film are caused to flow through the reactor, to form the thin film in accordance with chemical vapor deposition utilizing a photochemical reaction and to simultaneously decompose the photoresist owing to a photochemical reaction. Thus, the thin film is deposited on the parts other than the photoresist.</p>
申请公布号 EP0171605(A2) 申请公布日期 1986.02.19
申请号 EP19850108627 申请日期 1985.07.11
申请人 HITACHI, LTD. 发明人 MOCHIZUKI, YASUHIRO;TSUKUDA, KIYOSHI;MOMMA, NAOHIRO;HIRAO, MITSURU
分类号 H01L21/027;H01L21/314;H01L21/316;(IPC1-7):H01L21/31;C23C16/04 主分类号 H01L21/027
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