发明名称 |
Method of forming an insulating film on a semiconductor body. |
摘要 |
<p>The present invention relates to a method of manufacturing a semiconductor integrated circuit wherein a thin film such as insulator film is formed on selected areas of a semiconductor substrate. According to the present invention, photoresist is provided on selected areas of the semiconductor substrate in advance. The semiconductor substrate is placed in a reactor, and raw material gases for the thin film are caused to flow through the reactor, to form the thin film in accordance with chemical vapor deposition utilizing a photochemical reaction and to simultaneously decompose the photoresist owing to a photochemical reaction. Thus, the thin film is deposited on the parts other than the photoresist.</p> |
申请公布号 |
EP0171605(A2) |
申请公布日期 |
1986.02.19 |
申请号 |
EP19850108627 |
申请日期 |
1985.07.11 |
申请人 |
HITACHI, LTD. |
发明人 |
MOCHIZUKI, YASUHIRO;TSUKUDA, KIYOSHI;MOMMA, NAOHIRO;HIRAO, MITSURU |
分类号 |
H01L21/027;H01L21/314;H01L21/316;(IPC1-7):H01L21/31;C23C16/04 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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