发明名称 |
Far-infrared electromagnetic wave generator |
摘要 |
A far-infrared electromagnetic wave generator comprises a semiconductor containing at least one impurity which has an energy difference, close to a quantum energy of optical phonon, between its transition levels; a resonator having two reflectors for effecting positive feedback of an electromagnetic wave corresponding to the quantum energy; and means for applying an electric current across the semiconductor. The semiconductor may have p-i, n-i, p-i-n, p-n, or n-p- junction. One of the reflectors of the resonator may have a diffraction grating so that the wavelength of the electromagnetic wave to be generated can be varied by adjusting an angle of the diffraction grating.
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申请公布号 |
US4571727(A) |
申请公布日期 |
1986.02.18 |
申请号 |
US19830521226 |
申请日期 |
1983.08.09 |
申请人 |
ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI |
发明人 |
NISHIZAWA, JUN-ICHI;SUTO, KEN |
分类号 |
H01S3/1055;H01S5/14;H01S5/30;H01S5/32;(IPC1-7):H01S3/30 |
主分类号 |
H01S3/1055 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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