发明名称 |
High density, high voltage power FET |
摘要 |
Lateral FET structure is disclosed with an insulative region such as porous silicon filled with oxide formed in the drift region to divert the drift region current path and increase the length thereof to afford higher OFF state blocking voltage without increasing lateral dimensions. Combinations involving bidirectional power switching structures are also disclosed, as well as a multicell matrix array.
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申请公布号 |
US4571606(A) |
申请公布日期 |
1986.02.18 |
申请号 |
US19820390484 |
申请日期 |
1982.06.21 |
申请人 |
EATON CORPORATION |
发明人 |
BENJAMIN, JAMES A.;LADE, ROBERT W.;SCHUTTEN, HERMAN P.;JASKOLSKI, STANLEY V. |
分类号 |
H01L27/102;H01L29/06;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L27/102 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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