发明名称 |
Static semiconductor memory device |
摘要 |
A static memory device includes memory cells arranged in the form of a matrix. The memory cells are each formed of a flip-flop circuit and first and second MOS transistors whose current paths are each coupled between a corresponding one of first and second bistable output nodes of the flip-flop circuit and a corresponding one of paired digit lines and whose gates are coupled to first and second word lines, respectively.
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申请公布号 |
US4571703(A) |
申请公布日期 |
1986.02.18 |
申请号 |
US19830497137 |
申请日期 |
1983.05.23 |
申请人 |
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA |
发明人 |
NODA, MAKOTO |
分类号 |
G11C11/413;G11C8/16;G11C11/41;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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