发明名称 |
Mask alignment measurement structure for semiconductor fabrication |
摘要 |
A method of quantitatively measuring the relative alignment of elements on a surface of a semiconductor body formed by two sequential masking steps during processing is provided. A fixed pattern of rectangular images are formed on a first mask; and a fixed pattern of repeating U-shaped images are formed on a second mask. The semiconductor body is processed so that the rectangular images on the first mask align with the U-shaped images on the second mask. An electrical probe is applied to opposed ends of the boustrophederal pattern formed and the electrical resistance measured to determine a parameter related to the relative alignment of elements on the semiconductor body.
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申请公布号 |
US4571538(A) |
申请公布日期 |
1986.02.18 |
申请号 |
US19830488225 |
申请日期 |
1983.04.25 |
申请人 |
ROCKWELL INTERNATIONAL CORPORATION |
发明人 |
CHOW, PEI-MING D. |
分类号 |
G03F9/00;(IPC1-7):H01L21/66;G01R27/02 |
主分类号 |
G03F9/00 |
代理机构 |
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